Porous Nitride Light-Emitting Diodes

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

We demonstrate the feasibility of polycrystalline nitride semiconductor light-emitting diodes ~LEDs!. Here, polycrystalline LEDs were deposited on quartz substrates, incorporating a layer structure identical to that used for epitaxially grown LEDs. The deposition exhibits a tendency to produce c-oriented crystallites. Violet-blue ~430 nm! operation of a polycrystalline LED is demonstrated, with...

Comparing directed efficiency of III-nitride nanowire light- emitting diodes

III-nitride-based nanowires are a promising platform for solid-state lighting. III-nitride nanowires that act as natural waveguides to enhance directed extraction have previously been shown to be free of extended defects even on foreign substrates, such as silicon. While the efficiency of nanowire-based light-emitting diodes (LEDs) has been investigated, there has yet to be a comparison of hete...

III-nitride ultraviolet light-emitting diodes with delta doping

Nitride deep-ultraviolet light-emitting diodes with microlens array

We report on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes sUV LEDsd on sapphire substrates with an integrated microlens array. Microlenses with a diameter of 12 mm were fabricated on the sapphire substrate by resist thermal reflow and plasma dry etching. LED devices were flip-chip bonded on high thermal conductive AlN ceramic submounts to improve the thermal diss...

III-nitride blue and ultraviolet photonic crystal light emitting diodes

We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes ~LEDs! using photonic crystals ~PCs! under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam lithography and inductively coupled plasma dry etching. The total power at 20 mA of 3003300 mm unpackaged LED ...